 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| savantic semiconductor product specification silicon npn power transistors 2N5427 2n5429 description with to-66 package excellent safe operating area low collector saturation voltage applications for switching and wide-band amplifier applications. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N5427 80 v cbo collector-base voltage 2n5429 open emitter 100 v 2N5427 80 v ceo collector-emitter voltage 2n5429 open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i b base current 1 a p d total power dissipation t c =25 40 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.37 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N5427 2n5429 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N5427 80 v ceo(sus) collector-emitter sustaining voltage 2n5429 i c =50ma ;i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =2a; i b =0.2a 0.7 v v cesat-2 collector-emitter saturation voltage i c =7a ;i b =0.7a 1.2 v v be sat-1 base-emitter saturation voltage i c =2a; i b =0.2a 1.2 v v be sat-2 base-emitter saturation voltage i c =7a ;i b =0.7a 2.0 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 0.1 ma 2N5427 v ce = 75v; v be(off) =-1.5v t c =150 0.1 1.0 i cex collector cut-off current 2n5429 v ce = 90v; v be(off) =-1.5v t c =150 0.1 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe-1 dc current gain i c =0.5a ; v ce =2v 30 h fe-2 dc current gain i c =2a ; v ce =2v 30 120 h fe-3 dc current gain i c =5a ; v ce =2v 20 f t transition frequency i c =0.5a ; v ce =10v;f=10mhz 20 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N5427 2n5429 package outline fig.2 outline dimensions |
Price & Availability of 2N5427
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |